g3sba20, g3sba60, g3sba80 www.vishay.com vishay general semiconductor revision: 27-sep-13 1 document number: 88606 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 glass passivated single-p hase bridge rectifier features ? ul recognition file number e54214 ? ideal for printed circuit boards ? high surge current capability ? high case dielectric strength of 1500 v rms ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for monitor, tv, printer, sw itching mode power supply, adapter, audio equipment, and home appliances applications. mechanical data case: gbu ? molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked on body mounting torque: 10 cm-kg (8.8 inches-lbs) max. recommended torque: 5.7 cm-kg (5 inches-lbs) notes (1) unit case mounted on aluminum plate heatsink (2) units mounted on pcb with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length primary characteristics package gbu i f(av) 4.0 a v rrm 200 v, 600 v, 800 v i fsm 80 a i r 5 a v f at i f = 2.0 v 1.0 v t j max. 150 c diode variations in-line case s tyle g bu - ~ ~ + case s tyle g bu + ~ ~ - ~ ~ maximum ratings (t a = 25 c unless otherwise noted) parameter symbol g3sba20 g3sba60 g3sba80 unit maximum repetitive peak reverse voltage v rrm 200 600 800 v maximum rms voltage v rwm 140 420 560 v maximum dc blocking voltage v dc 200 600 800 v maximum average forward rectified output current at t c = 100 c (1) i f(av) 4.0 a t a = 25 c (2) 2.3 peak forward surge current single sine-wave superimposed on rated load i fsm 80 a rating for fusing (t < 8.3 ms) i 2 t27a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions sy mbol g3sba20 g3sba60 g3sba80 unit maximum instantaneous forward voltage per diode 2.0 a v f 1.00 v maximum dc reverse current at rated dc blocking voltage per diode t j = 25 c i r 5.0 a t j = 125 c 400
g3sba20, g3sba60, g3sba80 www.vishay.com vishay general semiconductor revision: 27-sep-13 2 document number: 88606 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) unit case mounted on aluminum plate heatsink (2) units mounted on pcb with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curve output rectified current fig. 2 - maximum non-repetitive peak forward surge current per diode fig. 3 - typical instantaneous forwar d characteristics per diode fig. 4 - typical reverse leakage c haracteristics per diode thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol g3sba20 g3sba60 g3sba80 unit typical thermal resistance r ? ja (2) 26 c/w r ? jc (1) 5.0 ordering information (example) preferred p/n unit weight (g ) preferred package code ba se quantity delivery mode g3sba60-e3/45 3.404 45 20 tube g3sba60-e3/51 3.404 51 250 paper tray 0 1 2 3 4 75 50 25 0 100 125 150 a v erage for w ard o u tp u t c u rrent (a) temperat u re (c) heatsink mo u nting, t c p.c.b. mo u nting, t a 0 20 40 60 80 100 1 100 peak for w ard s u rge c u rrent (a) nu mber of cycles at 60 hz 10 1.0 cycle 0.01 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 instantaneo u s for w ard voltage (v) instantaneo u s for w ard c u rrent (a) 0.01 0.1 1 10 100 80 60 40 20 0 100 percent of rated peak re v erse voltage (%) instantaneo u s re v erse c u rrent (a) t a = 125 c t a = 25 c
g3sba20, g3sba60, g3sba80 www.vishay.com vishay general semiconductor revision: 27-sep-13 3 document number: 88606 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance per diode fig. 6 - typical transient thermal impedance ? package outline dimensions in inches (millimeters) 1 10 100 0.1 10 1 100 re v erse voltage (v) j u nction capaci tance (pf) 0.1 1 10 100 0.01 0.1 10 1 100 t - heating time (s) transient thermal impedance (c/w) case style gbu polarity sho w n on front side of case, positi v e lead by be v eled corner 0.125 (3.2) x 45 chamfer 0.085 (2.16) 0.065 (1.65) 0.020 r (typ.) 0.880 (22.3) 0.860 (21.8) 0.160 (4.1) 0.140 (3.5) 0.075 (1.9) r . 0.080 (2.03) 0.060 (1.52) 0.043 (1.10) 0.035 (0.90) 0.080 (2.03) 0.065 (1.65) 0.210 (5.33) 0.190 (4.83) 0.140 (3.56) 0.130 (3.30) 9 typ. 5 typ. 0.022 (0.56) 0.018 (0.46) 0.310 (7.9) 0.290 (7.4) 0.740 (18.8) 0.720 (18.3) 0.710 (18.0) 0.690 (17.5) 0.100 (2.54) 0.085 (2.16) 0.085 (2.16) 0.075 (1.90)
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